2SK SIPMOS” FUJI POWER MOS-FET. FAP-II SERIES. N-CHANNEL SILICON POWER MOS-FET. Outline Drawings. Ø – 5,5mu pa, au. N-channel Power MOSFET,V, 6A, W, Ω, TO* integrated diode. Part, 2SK Category. Description, N-channel Silicon Power Mos-fet. Company, Fuji Electric Corp. of America. Datasheet, Download 2SK datasheet.
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2SK MOSFET Datasheet pdf – Equivalent. Cross Reference Search
It shares with the IGBT an isolated gate that makes it easy to drive. The Field-Effect Transistor FET is a transistor 2sk10822 uses an electric field to control the shape and hence the conductivity of a channel of one type of charge carrier in a semiconductor material. Drain-Source resistance Rds-on max. FETs are unipolar transistors as they involve single-carrier-type operation.
Compared to the other power semiconductor devices, for example IGBT, Thyristor, its main advantages are high commutation speed and good efficiency at low voltages. Free technical support If something goes wrong, we will be ready and willing to help! Comments 0 Write your comment. Education equipment Industrial test tools Catalogues Laboratory measuring equipment Measuring of environmental and 2sk10822 parameters Equipment for testing of medical equipment Calibration equipment Soldering equipment Telecommunication measuring equipment.
Semiconductor: 2SK1082 (2SK 1082) – N-FET 900V / 6A / 125W / 2.8E
Screw M3 PJP 0. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common.
Region Macedonia Kosovo Global. Drain – Source Voltage Vdss.
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2SK, Tube 2SK; Röhre 2SK ID, Transistor
Nut M3 PJP 0. Fluke, Mikroelektronika, Knipex and Logitech.
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Gate threshold voltage Vgs th. Because these two terminals are normally connected to each other short-circuited internally, only three terminals appear in electrical diagrams. Cables, Accessories Cables Accessories.